Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET (2023)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; ARAUJO, GUSTAVO VINICIUS DE - EP
- Unidade: EP
- DOI: 10.1109/SBMicro60499.2023.10302575
- Subjects: DISPOSITIVOS ELETRÔNICOS; TRANSISTORES; MICROELETRÔNICA
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Publisher: IEEE
- Publisher place: [Piscataway, N.J.]
- Date published: 2023
- Source:
- Título do periódico: SBMicro
- Conference titles: Symposium on Microelectronics Technology and Devices
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
RIBEIRO, Arllen D.R et al. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302575. Acesso em: 10 jun. 2024. -
APA
Ribeiro, A. D. R., Araújo, G. V. de, Martino, J. A., & Agopian, P. G. D. (2023). Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302575 -
NLM
Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET [Internet]. SBMicro. 2023 ;[citado 2024 jun. 10 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302575 -
Vancouver
Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET [Internet]. SBMicro. 2023 ;[citado 2024 jun. 10 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302575 - Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs
- Uniaxially strained silicon influence on two-stage operational transconductance amplifiers designed with SOI FinFET's
- Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
Informações sobre o DOI: 10.1109/SBMicro60499.2023.10302575 (Fonte: oaDOI API)
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