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Artigo de periodico
Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis (2023)
Silva, Wenita de Lima; Toledo, Rodrigo do Nascimento; Gonçalez Filho, Walter; Nogueira, Alexandro de Moraes; Agopian, Paula Ghedini Der ; Martino, João Antonio
Source: Solid State Electronics. Unidade: EP
Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, NANOTECNOLOGIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, Wenita de Lima et al. Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis. Solid State Electronics, v. 202, p. 1-8, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2023.108611. Acesso em: 29 maio 2024.
APA
Silva, W. de L., Toledo, R. do N., Gonçalez Filho, W., Nogueira, A. de M., Agopian, P. G. D., & Martino, J. A. (2023). Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis. Solid State Electronics, 202, 1-8. doi:10.1016/j.sse.2023.108611
NLM
Silva W de L, Toledo R do N, Gonçalez Filho W, Nogueira A de M, Agopian PGD, Martino JA. Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis [Internet]. Solid State Electronics. 2023 ; 202 1-8.[citado 2024 maio 29 ] Available from: https://doi.org/10.1016/j.sse.2023.108611
Vancouver
Silva W de L, Toledo R do N, Gonçalez Filho W, Nogueira A de M, Agopian PGD, Martino JA. Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis [Internet]. Solid State Electronics. 2023 ; 202 1-8.[citado 2024 maio 29 ] Available from: https://doi.org/10.1016/j.sse.2023.108611
Artigo de periodico
Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies (2023)
Toledo, Rodrigo do Nascimento; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: Semiconductor Science and Technology. Unidade: EP
Subjects: CIRCUITOS ANALÓGICOS, TRANSISTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TOLEDO, Rodrigo do Nascimento e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies. Semiconductor Science and Technology, v. 38, n. 9, p. 1-12, 2023Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/aceb84. Acesso em: 29 maio 2024.
APA
Toledo, R. do N., Martino, J. A., & Agopian, P. G. D. (2023). Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies. Semiconductor Science and Technology, 38( 9), 1-12. doi:10.1088/1361-6641/aceb84
NLM
Toledo R do N, Martino JA, Agopian PGD. Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies [Internet]. Semiconductor Science and Technology. 2023 ; 38( 9): 1-12.[citado 2024 maio 29 ] Available from: https://doi.org/10.1088/1361-6641/aceb84
Vancouver
Toledo R do N, Martino JA, Agopian PGD. Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies [Internet]. Semiconductor Science and Technology. 2023 ; 38( 9): 1-12.[citado 2024 maio 29 ] Available from: https://doi.org/10.1088/1361-6641/aceb84
Artigo de periodico
Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data (2023)
Toledo, Rodrigo do Nascimento; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, NANOTECNOLOGIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TOLEDO, Rodrigo do Nascimento e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data. Journal of Integrated Circuits and Systems, v. 18, n. 1, p. 1-6, 2023Tradução . . Disponível em: https://doi.org/10.29292/jics.v18i1.653. Acesso em: 29 maio 2024.
APA
Toledo, R. do N., Martino, J. A., & Agopian, P. G. D. (2023). Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data. Journal of Integrated Circuits and Systems, 18( 1), 1-6. doi:10.29292/jics.v18il.653
NLM
Toledo R do N, Martino JA, Agopian PGD. Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data [Internet]. Journal of Integrated Circuits and Systems. 2023 ;18( 1): 1-6.[citado 2024 maio 29 ] Available from: https://doi.org/10.29292/jics.v18i1.653
Vancouver
Toledo R do N, Martino JA, Agopian PGD. Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data [Internet]. Journal of Integrated Circuits and Systems. 2023 ;18( 1): 1-6.[citado 2024 maio 29 ] Available from: https://doi.org/10.29292/jics.v18i1.653
Artigo de periodico
Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data (2022)
Toledo, Rodrigo do Nascimento; Silva, Wenita de Lima; Gonçalez Filho, Walter; Nogueira, Alexandro de Moraes; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: Solid State Electronics. Unidade: EP
Subjects: TRANSISTORES, CONDUTIVIDADE ELÉTRICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TOLEDO, Rodrigo do Nascimento et al. Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data. Solid State Electronics, v. 194, p. 1-4, 2022Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2022.108328. Acesso em: 29 maio 2024.
APA
Toledo, R. do N., Silva, W. de L., Gonçalez Filho, W., Nogueira, A. de M., Martino, J. A., & Agopian, P. G. D. (2022). Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data. Solid State Electronics, 194, 1-4. doi:10.1016/j.sse.2022.108328
NLM
Toledo R do N, Silva W de L, Gonçalez Filho W, Nogueira A de M, Martino JA, Agopian PGD. Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data [Internet]. Solid State Electronics. 2022 ; 194 1-4.[citado 2024 maio 29 ] Available from: https://doi.org/10.1016/j.sse.2022.108328
Vancouver
Toledo R do N, Silva W de L, Gonçalez Filho W, Nogueira A de M, Martino JA, Agopian PGD. Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data [Internet]. Solid State Electronics. 2022 ; 194 1-4.[citado 2024 maio 29 ] Available from: https://doi.org/10.1016/j.sse.2022.108328
Trabalho de evento
Nanowire TFET with different source compositions applied to low-dropout voltage regulator (2022)
Toledo, Rodrigo do Nascimento; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMICRO. Conference titles: Symposium on Microelectronics Technology. Unidade: EP
Subjects: TRANSISTORES, NANOELETRÔNICA, CIRCUITOS ANALÓGICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TOLEDO, Rodrigo do Nascimento e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Nanowire TFET with different source compositions applied to low-dropout voltage regulator. 2022, Anais.. Piscataway: IEEE, 2022. p. 1-4. Disponível em: https://www.doi.org/10.1109/SBMICRO55822.2022.9881035. Acesso em: 29 maio 2024.
APA
Toledo, R. do N., Martino, J. A., & Agopian, P. G. D. (2022). Nanowire TFET with different source compositions applied to low-dropout voltage regulator. In SBMICRO (p. 1-4). Piscataway: IEEE. doi:10.1109/SBMICRO55822.2022.9881035
NLM
Toledo R do N, Martino JA, Agopian PGD. Nanowire TFET with different source compositions applied to low-dropout voltage regulator [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 maio 29 ] Available from: https://www.doi.org/10.1109/SBMICRO55822.2022.9881035
Vancouver
Toledo R do N, Martino JA, Agopian PGD. Nanowire TFET with different source compositions applied to low-dropout voltage regulator [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 maio 29 ] Available from: https://www.doi.org/10.1109/SBMICRO55822.2022.9881035

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